symbol v ds v gs i dm t j , t stg symbol ty p max 300 360 340 425 r jl 280 320 maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w w t a =70c 0.22 junction and storage temperature range -55 to 150 c power dissipation a t a =25c p d 0.35 a t a =70c 1.5 pulsed drain current b 25 continuous drain current a t a =25c i d 2 drain-source voltage 20 v gate-source voltage 8 v absolute maximum ratings t a =25c unless otherwise noted parameter maximum units features v ds (v) = 20v i d = 2 a (v gs = 4.5v) r ds(on) < 62m ? (v gs = 4.5v) r ds(on) < 70m ? (v gs = 2.5v) r ds(on) < 85m ? (v gs = 1.8v) the AO7414 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v, in the small sot-323 footprint. it can be used for a wide variety of applications, including load switching, low current inverters and low current dc-dc converters. a o7414 and AO7414l are electrically identical. -rohs compliant -AO7414l is halogen free g d s s g d sc-70 (sot-323) top view AO7414 n-channel enhancement mode field effect transistor general description www.freescale.net.cn 1 / 4
symbol min typ max units bv dss 20 v 1 t j =55c 5 i gss 100 na v gs(th) 0.5 0.68 1 v i d(on) 25 a 50 62 t j =125c 70 90 56 70 m ? 66 85 g fs 15 s v sd 0.7 1 v i s 0.35 a c iss 260 320 pf c oss 48 pf c rss 27 pf r g 3 4.5 ? q g 2.9 3.8 nc q gs 0.4 nc q gd 0.6 nc t d(on) 2.5 ns t r 3.2 ns t d(off) 21 ns t f 3ns t rr 14 19 ns q rr 3.4 nc electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =20v, v gs =0v gate threshold voltage v ds =v gs i d =250 a a gate-body leakage current v ds =0v, v gs =8v r ds(on) static drain-source on-resistance v gs =4.5v, i d =2a m ? v gs =2.5v, i d =1.8a v gs =1.8v, i d =1a forward transconductance v ds =5v, i d =2a diode forward voltage i s =1a,v gs =0v gate drain charge maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =10v, f=1mhz output capacitance reverse transfer capacitance body diode reverse recovery charge i f =2a, di/dt=100a/ s turn-on delaytime v gs =4.5v, v ds =10v, r l =5 ? , r gen =6 ? turn-on rise time turn-off delaytime turn-off fall time v gs =4.5v, v ds =5v on state drain current body diode reverse recovery time i f =2a, di/dt=100a/ s gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =4.5v, v ds =10v, i d =2a gate source charge a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev1: march 2008 AO7414 n-channel enhancement mode field effect transistor www.freescale.net.cn 2 / 4
typical electrical and thermal characteristics v gs =4.5v, i d =1.8a v gs =2.5v, i d =1.7a v gs =1.8v, i d =1a v gs =1.5v, i d =1a 40 60 80 100 120 012345678910 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =4.5v v gs =1.8v 8.00e-01 1.00e+00 1.20e+00 1.40e+00 1.60e+00 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v i d =1.7a v gs =4.5v i d =1.8a v gs =1.8v i d =1a 40 60 80 100 120 12345678 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =2a 25c 125c v gs =2.5v 0 5 10 15 20 25 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =1.5v 2v 2.5v 4.5v 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 125c 25c 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c AO7414 n-channel enhancement mode field effect transistor www.freescale.net.cn 3 / 4
typical electrical and thermal characteristics v gs =4.5v, i d =1.8a v gs =2.5v, i d =1.7a v gs =1.8v, i d =1a v gs =1.5v, i d =1a 0.1 1 10 100 1000 0 0 0 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10ms 1ms 1s 10s dc r ds(on) limited t j(max) =150c t a =25c 100ms v ds =10v i d =2.2a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =250c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c t on t p d t on p d 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 q g (nc) figure 7: gate-charge characteristics v gs (volts) v ds =10v i d =3.5a 0 50 100 150 200 250 300 350 400 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 100us 10us AO7414 n-channel enhancement mode field effect transistor www.freescale.net.cn 4 / 4
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